| 摘要 |
PURPOSE:To offer an insulating gate semiconductor device which has a high gate reliability and does not break even if sharp surge input is added by inserting a resistor enough large in sectional area under an electrode for bonding. CONSTITUTION:The resistor R1 (4) of polycrystalline silicon exists under a bonding pad 8 to which a gate input taking-out wire 2 is connected. Hereby, the resistor of a large current capacity with a large area can be inserted without increasing the chip area. Since the bonding area can be used as it is this way, a power MOS, which is at a low cost and has a gate of a high electrostatic breakdown voltage, can be made. |
