| 摘要 |
<p>PURPOSE:To prevent the resist resolution inferiority between pads by putting it in such a structure that the second layer metallic film and the first layer insulating film do not lie one upon another by sliding the positions of the openings of the insulating films from each other, between the insulating films at the upper and lower layers, at the pad ends. CONSTITUTION:In a semiconductor integrated circuit device where elements are made on 4 semiconductor substrate 1, an outer electrode connecting pad PA is constituted of a metallic wiring layers of at least three layers or more, and a first metallic wiring layer 5, which constitutes the outer electrode connecting pad PA, is connected to a second metallic wiring layer 7, at the opening part 6a provided in a first insulating film 6 at the upper layer. Furthermore, the second metallic wiring layer 7 is connected to a third metallic wiring layer 9, at the opening part 8a provided in the second insulating film 8 formed at the upper layer, and besides those are so constituted that the first insulating film 6 and the third metallic wiring layer 9 do not lie one upon another. Hereby, the difference in level at the pad end is suppressed small, and the resolution inferiority of resist between pads can be removed, and the pollution of a wafer face resulting from resist resolution inferiority can be removed.</p> |
