发明名称 DEVELOPING DEVICE FOR SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE:To prevent an improper etching, etc., due to rinsing malfunction by using a megasonic nozzle when conducting rinsing with pure water after developing. CONSTITUTION:A predetermined quantity of developer is dropped from a developer nozzle 3 through a developer pipe 4, and developing is executed for predetermined time (about 1min) in a state that the developer is raised on the entire wafer 2. When the developing is then finished, pure water 6 is fed from a megasonic nozzle 5, the nozzle 5 is simultaneously driven by a megasonic nozzle driving power source 8, megasonic vibration is applied to the pure water, the wafer 2 is simultaneously rotated to rinse the entire wafer. Then, after it is rinsed for predetermined time, the water 6 is stopped, the wafer 2 is then rotated at a high speed to dry the wafer 2. Thus, improper etching due to rinsing malfunction can be prevented.
申请公布号 JPH03148109(A) 申请公布日期 1991.06.24
申请号 JP19890286227 申请日期 1989.11.02
申请人 NEC CORP 发明人 FUJIWARA MAKOTO
分类号 G03F7/30;H01L21/027;H01L21/30 主分类号 G03F7/30
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