发明名称 SYSTEME DE FORMATION D'UNE IMAGE AYANT UNE SENSIBILITE SUPERIEURE ET PROCEDE POUR SA FABRICATION
摘要 <p>An imaging array (10) of the charge-transfer type having improved sensitivity includes a semiconductor body (12) having a plurality of substantially parallel charge-transfer channels (20) with channel stops (22) therebetween which extend a distance into the semiconductor body (12). At least some of the channel stops (22) have blooming drains (26) therein for the removal of excess photogenerated charge. Buried barrier regions (28) stop the floor of electrical charge, generated by absorption of light in the body (12), into the channels (20) while preventing the loss of such charge by direct flow into the blooming drains (26). The buried barrier regions (28) extend a further distance into the body (12) from those channel stops (22) having blooming drains (26) therein and containing a greater concentration of conductivity modifiers than that contained in the channel stops. <IMAGE></p>
申请公布号 FR2538952(B1) 申请公布日期 1991.06.21
申请号 FR19840000019 申请日期 1984.01.02
申请人 RCA CORP 发明人 EUGENE DIEDRICH SAVOYE, WALTER FRANK KOSONOCKY ET LLOYD FRANKLIN WALLACE;KOSONOCKY WALTER FRANK;WALLACE LLOYD FRANKLIN
分类号 H04N5/335;H01L27/148;H01L31/18;(IPC1-7):01L27/14;01L31/18 主分类号 H04N5/335
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