| 摘要 |
The invention relates to semiconductor memories.
<??>A circuit for protection against an incorrect write operation includes a source voltage detection circuit (14) which detects the value of a source voltage and which generates a first control signal which is transmitted to a state-selection terminal of a memory device, a reference register (18a) in which predetermined reference data are recorded beforehand, a first write-test register (18b), a validity checking circuit (18d) which generates a second control signal on the basis of the determination of the agreement between the data contained in the two registers and a state-selection circuit (18e) which generates a signal which is applied to the state-selection terminal of the memory device (12), under the supervision of the first and second control signals.
<??>Application to microcomputing.
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