| 摘要 |
PURPOSE:To lessen the warpage of the surface of a semiconductor chip and to reduce an internal stress in the chip by a method wherein silicon carbide or Al nitride is used as the material for lower and upper plates, the semiconductor chip is mounted on the lower plate, a middle plate is bonded on the chip by the upper and lower plates holding the middle plate consisting of a single layer or a plurality of layers of a wiring board between the upper and lower plates, the upper part of the frame of the upper plate is sealed by a cap body consisting of glass or a synthetic resin and light is incident through an opening part provided in the upper plate. CONSTITUTION:An image sensor chip 14 consisting of a solid-state image sensing element made of silicon and the like has pads 15 and is bonded on a lower plate 11. A rectangle-shaped hole 22 for light incidence use is provided in an upper plate 16. After the plates 11 and 16 are formed into a plate having a flatness of 20 to 50mum or thereabouts all over the surface of the plate, a glass cover 18 and the plate 16, the plate 16 and a middle plate 12, the plate 12 and the plate 11 and the chip 14 and the plate 11 are respectively adhered and bonded with a solder or a bonding agent consisting of a resin or the like. The plates 11 and 116 are both formed of silicon carbide, whose linear expansion coefficient is very approximate to that of silicon constituting the chip 14. |
