| 摘要 |
PURPOSE:To use a dopant containing crystalline silicon substrate and to form a polycrystalline thin film on the substrate at a comparatively low temperature to form a solar cell of high quality by a method wherein a P-type or an N-type silicon thin film is turned into a polycrystalline silicon thin film specified in resistivity and thickness. CONSTITUTION:A solar cell is composed of a silicon crystal substrate and a P-type or an N-type silicon thins film formed on the substrate, where the silicon thin film has a resistivity of 10<-1>OMEGA.cm or below and a thickness of 1000Angstrom or below. It is preferable that a substrate to use is formed of crystal silicon whose crystal grain diameter is 500Angstrom or above and which contains dopant in concentration of 10-1000ppm. It is preferable that a substrate is 0.1-1mm, especially 0.3-0.8mm in thickness. |
