| 摘要 |
PURPOSE:To obtain a connecting conductor having good conductivity by forming an interlayer insulating film on a metallic film, opening a hole at the film to form an exposed part at the metallic film, growing metal on the exposed part to form a grown projection becoming a connecting conductor and forming metal filled in high density in the hole. CONSTITUTION:The exposed part 5 of a wiring metal film 2 in a contacting hole 4 formed at an interlayer insulating layer 3 on a wiring metallic film 2 of Al, Cu or the like on a semiconductor substrate 1 is locally heated by a laser beam, and is held around its melting point, thereby forming a grown projection 7 on the film 2 in the hole 4. At this time the reduction in the volume due to the projection growth of the film 2 should be extremely small, causing no trouble. Subsequently, an upper layer wire metallic film 8 is formed, and is connected to the film 2 via the projection 7. |
