Method of improving high temperature stability of PTSI/SI structure

摘要

A method of improving the high temperature stability of PtSi/Si structure is disclosed. A sufficient amount of fluorine-contained ion is implanted into the PtSi/Si structure or Pt/Si structure or Si substrate. The characteristics of the resulted PtSi/Si structure remain unchanged even after annealing at 800 DEG C. in contrast to the conventional PtSi/Si structure whose characteristics start to degrade at 700 DEG C. All devices contacted by PtSi, either ohmic or Schottky contact, are able to withstand an 800 DEG C. high temperature treatment without degradation.