| 摘要 |
A process for defining conductors on a integrated circuit substrate which includes selectively dry etching through a metal layer on the substrate using plasma reactants including conductor sidewall passivation gases such as silicon tetrabromide, SiBr4. This process is useful to form high quality silicon and nitrogen containing inorganic films on the sidewall surfaces of the conductors thus formed, and these films protect the conductors from lateral etching and undercutting and preserve their structural integrity. In a preferred embodiment of the invention, the metal layer or substrate is tungsten, W, and is masked directly with a photoresist polymer.
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