| 摘要 |
PURPOSE:To enhance electrical reliability of a semiconductor integrated circuit device of a multilayer interconnection structure which adopts a CCB system by a method wherein an interconnection under an interlayer insulating film is constituted of an aluminum film or an aluminum alloy film, an external terminal on the interlayer insulating film is constituted of a copper film or a gold film and the surface of the external terminal is irradiated with a laser beam and is made to reflow. CONSTITUTION:Aluminum interconnections 22a to 22c are covered respectively with an interlayer insulating film 23. Interconnections 25a, 25b and an external terminal 25c which are formed in the process of forming an interconnection of a fourth layer are formed on the interlayer insulating film 23. The external terminal 25c is connected electrically to the aluminum interconnection 22b of a third layer through a connection hole 24 made in the interlayer insulating film 23. Copper is used for the external terminal 25c. The surface of the external terminal 25c is irradiated with a laser beam; it is made to reflow and flattened. Thereby, a step coverage of a silicon nitride film 26 formed on the external terminal 25c is enhanced. Thereby, it is possible to prevent the external terminal 25c from being etched by using a diluted etchant for mating a bonding opening 28 and to prevent disconnection of the external terminal 25c. As a result, the electrical reliability can be enhanced. |
