| 摘要 |
PURPOSE:To make it possible to form a good resist pattern even in the case a thick resist film is used by a method wherein after an exposure of a prescribed pattern is performed on the resist containing an alkali soluble resin, a dissolution inhibitor and an acid generator, ultra-violet rays are irradiated on the whole surface of the resist. CONSTITUTION:A resist (1) 2 consisting of an alkali soluble resin, a dissolution inhibitor and an acid generator is applied on an Si substrate 1 in a prescribed thickness and a heat treatment is performed. Then, an electron beam exposure treatment is performed, subsequently far ultraviolet rays 4 from a low-pressure mercury-arc lamp are exposed on the whole surface of the resist and after a heat treatment is performed, an unexposed part only in the resist film is dissolved. Via this process, a line and space pattern having almost vertical sidewalls can be formed. On the other hand, in the case the entire surface irradiation of far ultraviolet rays is not performed, a resist pattern is formed into a triangle. Thereby, even in the case a thick resist film is used, a good resist pattern 5 can be formed. |
