发明名称 STRUCTURE OF SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING ELEMENT ARRAY
摘要 PURPOSE:To facilitate the patterning of both electrodes when a semiconductor light emitting element array is constituted, by arranging both of the current injection electrodes for semiconductor multilayer structure on the surface side of a substrate. CONSTITUTION:A semiconductor multilayer structure 202 is formed on the surface of a substrate 201, i.e., the upper side surface of the substrate 201. The structure has a junction in the inside, and is constituted so as to radiate light when a current is injected. The form of the semiconductor multilayer structure 202 is rectangular, and a light radiating end surface 204 is formed perpendicularly to the longitudinal direction. A first electrode 203 is stuck to the semiconductor multilayer structure 202, and a second electrode 206 is arranged at the position on the substrate 201 other than the semiconductor multilayer structure 202. When a current is made to flow in the semiconductor multilayer structure 202 by injecting a current from the electrodes 203, 206, light is generated in a junction inside the structure 202. The light can be led out as the radiation light L outputted from the light radiation end surface 204 so as to be vertical to said end surface. Thereby the patterning of electrodes is facilitated.
申请公布号 JPH03142974(A) 申请公布日期 1991.06.18
申请号 JP19890282760 申请日期 1989.10.30
申请人 RICOH CO LTD;RICOH RES INST OF GEN ELECTRON 发明人 SATO SHIRO
分类号 B41J2/44;B41J2/45;B41J2/455;H01L27/15;H01L33/08;H01L33/14;H01L33/28;H01L33/30;H01L33/38;H01L33/40;H01S5/00;H01S5/02;H01S5/026;H01S5/042;H01S5/40 主分类号 B41J2/44
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