| 摘要 |
PURPOSE:To enable a resist pattern good in the profile with good controllability by forming a phenolic positive type resist on a substrate, patternwise exposing the resist layer, spreading a solution containing an etherifying reagent and a base on the resist film, and developing it with an alkaline developing solution. CONSTITUTION:The silicon substrate 10 is coated with the positive type resist 11, arranging a photomask 12 with a mask pattern 12a formed, exposing the resist 11 through the mask 12 to form exposed parts 11A. Then, the solution containing the etherifying reagent and the base is spread on the surface of the resist 11 to allow the reagent etherify the phenolic OH group on the surface of the resist layer, thus permitting the resist layer to be reduced in alkali solubility and surface dissolution rate, and a perpendicular pattern profile to be formed by alkali development. |
