| 摘要 |
<p>PURPOSE:To obtain high light emission efficiency in a light emitting diode by absorbing heat produced in a P-N junction region in the vicinity of the side face in the region corresponding to the part of a light shielding mask, thereby suppressing the increase in the temperature. CONSTITUTION:An LED is composed of a junction of a P type semiconductor layer P2 and an N type semiconductor layer N2. An electrode A2 is provided at a partial region contacted with the side face 10, from which a light e is emitted, is provided on the top surface of the layer P2, and a light shielding mask A3 of insulated state from the electrode 2A is formed at the part except the electrode A2. In an LED thus constructed, when a current is supplied to the electrode A2, a current is flowed mainly to the region in the vicinity of the side face 10 and is not considerably flowed to the region provided with a mask A3. Accordingly, the temperature rise of the latter region is less than that of the former region. Therefore, the heat produced from the former region can be absorbed by the latter region, thereby suppressing the temperature rise at the P-N junction region in the vicinity of the side face 10, thereby obtaining the LED having good light emission efficiency.</p> |
