| 摘要 |
The circuit comprises a transistor (T3), of opposite type to that of the basic transistors (T1) and (T2) of the current mirror, in which the emitter-collector circuit provides the diode mounting of the transistor (T1) connected to a reference current generator (I). The collector voltages of the transistors (T1) and (T2) are then separated only by the voltage drop (VB E) in the emitter-base junction of the transistor (T3). The emitter-collector voltages (VC E) of the two transistors (T1) and (T2) then remain close, whatever the variations in the voltage drawn by the load (1) and the current in this load is thus immune to variations due to the Early effect. Application to a current mirror integrated circuit with basic transistors (T1, T2) of the PNP type. <IMAGE>
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