| 摘要 |
Hybrid circuit structures and methods of fabrication particularly suitable for the fabrication of high density multilayer interconnects utilizing silicon substrates are disclosed. In accordance with the method, a layer of alumina (28) is put down over the silicon substrate (20), typically having an oxide layer (22) thereover, which layer of alumina acts as a blocking barrier to any subsequent plasma etching process for etching polymer layers (24) thereover during the subsequent high density multilayer interconnect fabrication steps. Various representative high density multi-layer interconnect structures on silicon substrates and methods of forming the same are disclosed, including the inclusion of an adhesion enhancement layer (30) over the layer of alumina to enhance the adhesion of a polymer which would not otherwise adhere well directly to the layer of alumina. |
