发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the heat dissipating property at the time of cutting a film fuse by forming an opening, so that it may correspond to the pattern of a film fuse, at the third insulating layer on a second insulating layer which covers a first insulating layer and a film fuse. CONSTITUTION:An opening 19 is made, so that it may correspond to the pattern of a film fuse 12, at the third insulating layer 17 on a second insulating layer 16 which covers a first insulating layer 15 and the film fuse 12. Hereby, in the case that high melting point metal such as molybdenum, etc., is used for the film fuse, when cutting this by letting current flow, such troubles that the silicon substrate gets in fused conditions instantaneously can be reduced, and heat dissipating property can be improved.
申请公布号 JPH03138963(A) 申请公布日期 1991.06.13
申请号 JP19890276355 申请日期 1989.10.24
申请人 SEIKOSHA CO LTD;NIPPON PRECISION CIRCUITS KK 发明人 MACHIDA KOJI;NAKAMURA HIDEYUKI;TONEGI HIROSHI
分类号 H01L21/82;H01L23/525;H01L27/10 主分类号 H01L21/82
代理机构 代理人
主权项
地址