| 摘要 |
PURPOSE:To obtain the pseudo neural function element with forgetfulness characteristics which is reset to a high-resistance state after a memory function and a low-resistance state are continued for a constant time by providing an organic thin film which changes between the high-resistance state and low- resistance state with an electric input signal. CONSTITUTION:On the top surface of a substrate 1, a lower electrode 2, the organic thin film 3, and an upper electrode 4 are formed in order. The thin film 3 is initially in the high-resistance state R1 when a sweep voltage signal is applied between the electrodes 2 and 4 to intensify an electric field E1, but changes into a negative resistance area and then the low-resistance state R2 when an electric field E1 is exceeded. Thus, the element changes between the high-resistance state R1 and low-resistance state R2 reciprocally by a single-time positive and negative electric field sweep. When the electric field excitation is removed after the electric field intensity E1 is exceeded and the low-resistance state R2 is entered, the low-resistance state R2 is held, but the state is not permanent, but reset to the high-resistance state R1 with time. Thus, the pseudo neural function element which has the forgetfulness characteristics is obtained with the independent element of the organic thin film. |
