发明名称 ELEMENT ARRAY WITH COMBINED SWITCHING AND MEMORY FUNCTIONS
摘要 PURPOSE:To reduce the cost by arraying plural elements which are each sandwiched between a couple of electrodes where thin films which have a switching function and a memory function face each other. CONSTITUTION:Lower electrodes 31 - 36 are formed on an insulating substrate 4, a lead phthalocyanine vapor-deposited film is laminated, and striped electrodes 201 - 211 are laminated thereupon to obtain an array of longitudinally 11 and laterally 6 elements. When a voltage which is higher than a threshold value is applied to a specific electrode intersection, an ON state is stored and a necessary circuit network is formed. When the voltage equal to the threshold value is applied, the intersection part is irradiated with light to store the ON state in the part, and light information can be written directly in the array. When a reverse voltage is applied to the intersection part, the ON state is eliminated. Consequently, the simple material constitution and structure enables a memory function with both an electric signal and a light signal and resets the memory, so the cost is reduced.
申请公布号 JPH03137894(A) 申请公布日期 1991.06.12
申请号 JP19890275309 申请日期 1989.10.23
申请人 MATSUSHITA GIKEN KK 发明人 ASAKAWA SHIRO;WARATANI KATSUNORI;NICHOGI KATSUHIRO;SAITO YUKIHIRO;TAOMOTO AKIRA
分类号 G11C11/42;G11C13/00;H03K19/177 主分类号 G11C11/42
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