| 摘要 |
PURPOSE:To obtain an element which has superior write characteristics and memory storage characteristics by using an organic thin film which enters a high-resistance state and a low-resistance state by electric field application, holds the current resistance state after an electric field is removed, and changes the state fast at high temperature and slow at low temperature. CONSTITUTION:A lower electrode 2, the organic thin film 3, and an upper electrode 4 are formed on the surface of a substrate 1. The organic thin film is initially in the high-resistance state R1 when a sweep voltage signal is applied between the electrodes 2 and 4 to intensify the electric field, but changes into a negative resistance area and then the low-resistance state R2 when electric field intensity E1 is exceeded. When the electric field excitation is removed after the electric field intensity E1 is exceeded and the low-resistance state R2 is entered, the low-resistance state R2 is maintained. When the electric field excitation is reset after electric field intensity E2 is exceeded and the high-resistance state R1 is entered, the high-resistance state R1 is held. The changing speed is faster and faster as the temperature is higher and higher. Thus, the storage element which has superior write characteristics and memory storage characteristics is obtained. |
