Integrated circuit comprising memories and method for its fabrication.

摘要

The present invention relates to an integrated circuit comprising memories. The substrate on which the transistors of the memory locations are produced consists of an n<+> doped substrate (6) provided at its p<-> doped surface of small thickness converted by ion implantation into a n<-> doped layer in all the zones (9) surrounding the zone (7') in which the transistors constituting the memory locations are produced.