| 摘要 |
<p>An improved damper diode is obtained by replacing the usual step junction (40) (P<+>-Nu-N<+>) structure (30) of the prior art with an epitaxial double sided Pi-Nu (i.e., P+ -Nu-N+) structure (60) in which the thickness (83,81) and impurity concentrations of the Pi (82) and Nu (80) regions are substantially equal and have a combined thickness about equal to the prior art Nu region (34) for the same voltage. Improved transient response (TFR), better transient energy absorption capability (UIS) and lower forward transient turn-on peak over-shoot voltage (TOPO) is obtained for the same or higher reverse breakdown voltage (BVR), in the same or smaller die size. <IMAGE></p> |
