| 摘要 |
A metal-semiconductor field effect transistor comprises a substrate (101, 201, 301, 401) of a group III-V compound having a zinc blende structure, a gate electrode (103,203, 303, 403) provided on the substrate in a predetermined direction, a channel region (102, 202, 302, 402) defined in the substrate in alignment with the gate electrode, a source region (104, 204, 304, 404) defined in the substrate at one side of the channel region, a drain region (105, 205, 305, 405) defined in the substrate at the other side of the channel region, a source electrode (111, 211, 311, 411) provided on the substrate so as to cover a first p.art of the source region far from the gate electrode while leaving a second part of the source region close to the gate electrode uncovered, a drain electrode (112, 212, 312, 412) provided on the substrate so as to cover a first part of the drain region far from the gate electrode while leaving a second part of the drain region close to the gate electrode uncovered, and a passivation film (109, 209, 309, 409) of a material experiencing a stress and provided so as to cover the second part of the source region and the second part of the drain region, wherein the passivation film comprises an inner area part (109a, 209a, 309a, 409a) and a marginal area part (109b, 209b, 309b, 409b) defined such that the marginal area part has a modified thickness relative to that of the inner area part. |
