发明名称 Process for producing electron emission device
摘要 A process for producing an electron emission device having voltage controlled negative resistance (VCNR) characteristics. A conductive thin film containing fine particles of a metal, metal oxide, semiconductor or the like is formed on a substrate between opposing electrodes which are also form on the substrate. A voltage is applied across the conductive thin film to generate heat with which the conductive thin film is heat treated to have an island structure which is formed of a spatially discontinuous film of fine particles and which serves as an electron emitting region.
申请公布号 US5023110(A) 申请公布日期 1991.06.11
申请号 US19890345173 申请日期 1989.05.01
申请人 CANON KABUSHIKI KAISHA 发明人 NOMURA, ICHIRO;KANEKO, TETSUYA;BANNO, YOSHIKAZU;TAKEDA, TOSHIHIKO
分类号 H01J1/316 主分类号 H01J1/316
代理机构 代理人
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