发明名称 |
Process for producing electron emission device |
摘要 |
A process for producing an electron emission device having voltage controlled negative resistance (VCNR) characteristics. A conductive thin film containing fine particles of a metal, metal oxide, semiconductor or the like is formed on a substrate between opposing electrodes which are also form on the substrate. A voltage is applied across the conductive thin film to generate heat with which the conductive thin film is heat treated to have an island structure which is formed of a spatially discontinuous film of fine particles and which serves as an electron emitting region.
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申请公布号 |
US5023110(A) |
申请公布日期 |
1991.06.11 |
申请号 |
US19890345173 |
申请日期 |
1989.05.01 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
NOMURA, ICHIRO;KANEKO, TETSUYA;BANNO, YOSHIKAZU;TAKEDA, TOSHIHIKO |
分类号 |
H01J1/316 |
主分类号 |
H01J1/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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