发明名称 |
Method of wet etching by use of plasma etched carbonaceous masks |
摘要 |
A substrate having a film to be etched is coated with a carbon film. The carbon film is then coated with an organic mask. The mask is then patterned to expose portions of the carbon film. Plasma etching is then utilized to remove portions of the carbon film not covered by the mask, followed by wet etching to form a predetermined pattern in the film on the substrate.
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申请公布号 |
US5022959(A) |
申请公布日期 |
1991.06.11 |
申请号 |
US19890392582 |
申请日期 |
1989.08.11 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ITOH, KENJI;AOYAGI, OSAMU |
分类号 |
H01L21/302;H01L21/306;H01L21/3065;H01L21/308;H01L21/311;H01L21/3213 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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