发明名称 Method of wet etching by use of plasma etched carbonaceous masks
摘要 A substrate having a film to be etched is coated with a carbon film. The carbon film is then coated with an organic mask. The mask is then patterned to expose portions of the carbon film. Plasma etching is then utilized to remove portions of the carbon film not covered by the mask, followed by wet etching to form a predetermined pattern in the film on the substrate.
申请公布号 US5022959(A) 申请公布日期 1991.06.11
申请号 US19890392582 申请日期 1989.08.11
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ITOH, KENJI;AOYAGI, OSAMU
分类号 H01L21/302;H01L21/306;H01L21/3065;H01L21/308;H01L21/311;H01L21/3213 主分类号 H01L21/302
代理机构 代理人
主权项
地址