| 摘要 |
PURPOSE:To improve the adhesive strength of the electrode wiring for the subject semiconductor device by a method wherein an aperture is provided on the insulating film formed on a semiconductor substrate, and after the substrate has been etched by the mixed solution of hydrochloric acid and intric acid, an electrode wiring is formed, and then the thin gold film deposited on the substrate is removed. CONSTITUTION:A thin gold film is coated on the reverse side of the silicon substrate 21 with a P-N junction, the surface of which was covered by an insulating film 22, and gold is diffused in the silicon substrate 21. Then, an aperture 24 to be used to pick out an electrode is formed. At this point, as the gold 25 is deposited on the surface of the silicon substrate at the aperture section, the gold 25 is removed by performing an etching using the mixed solution of hydrochloric acid and nitric acid having the mixture ratio of 3:1. Then, after the substrate has been cleaned by Planson cleaning solution and the like, aluminum thin film is deposited and a wiring 26 is formed. |
