| 摘要 |
PURPOSE:To easily control the shape and quality of single crystal by setting a specified temp. pattern relating to the target temp. of a heater and adopting a constitution wherein fluctuation caused therefrom is made small in growth of Si single crystal by a CZ process. CONSTITUTION:A constitution described hereunder is added to a controlling device for growth of Si single crystal which is equipped with a device 40 that photographs the vicinity 361 of the growth part of Si single crystal 36 and outputs a picture signal, a device 54 that processes this picture signal and measures the diameter Di of the growth part of Si single crystal, a means 52 for the purpose of setting the target pattern Do(X) of the diameter as a function of the pulling-up distance X of Si single crystal, a motor 28 for pulling up Si single crystal, the means 55, 56, 58 for controlling the rotational speed of the motor 28 so that the control deviation (Di - Do) of the diameter approaches zero, a means 48 for detecting the temp. correspondent to the temp. of a heater 24 for heating and melting Si in a crucible 22 and the means 65, 66 for controlling electric power supplied to the heater 24 so that the detected temp. is regulated to the target temp. T0. In other words, a means 60 for setting the temp. pattern TB(X) as the function of the pulling-up distance X and a means 63 which supplys total of both value K (Di - Do) proportional to the control deviation of the diameter and the output value TB of the temp. pattern setting means 60 to the electric power controlling means 65, 66 as the target temp. T0 are added. |
