| 摘要 |
PURPOSE:To reduce crystal dislocation in a heteroepitaxial layer, by growing, in order on a substrate, a heteroepitaxial layer having different lattice constants, a lateral distorted superlattice layer formed by alternately arranging, in the substrate plane direction, two kinds of semiconductor having the same crystal structure and different lattice constants, and a hetero epitaxial layer having lattice constants different from those of the substrate. CONSTITUTION:On a substrate 1, a heteroepitaxial layer 2 is grown. Thereon two kinds of semiconductor x, y having the same crystal structure and different lattice constants are suitably selected, the same fractional superlattice structure are reapeated, several layers are stacked and grown, and a lateral distorted superlattice layer 3 having structure of x-y-x-y-x-y... is formed. Thereon a hetero epitaxial layer 4 whose lattice constants are different from those of the substrate is grown. The propagation of crystal dislocation which is generated on the interface between the substrate (1 and the heteroepitaxial layer 2 and propagates in the heteroepitaxial layer 2 is effectively blocked, so that the crystal dislocation density of the heteroepitaxial layer 4 surface is remarkably decreased. As a result, electrical characteristics of an element formed in the heteroepitaxial layer 4 are not degraded as compared with an element formed in the bulk.
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