Mask for X-ray lityhography and method of manufacturing the same

摘要

A mask for X-ray lithography includes a transparent thin film (1) formed preferably of SiC, an X-ray absorbing pattern (2) formed preferably of Au formed on the surface of the transparent thin film (1) and a support member (3) formed preferably of Si formed on the back surface of the transparent thin film (1). The support member (3) has an opening (4) for exposing therethrough the back surface of the transparent thin film (1). A transparent conductive thin film (5), preferably of In2O3, is formed over the back surfaces of both the exposed transparent thin film (1) and the support member (3) to facilitate relaxation electrification of the transparent thin film (1) as may happen during X-ray exposure thereof.