| 摘要 |
PURPOSE:To inhibit dark currents by forming a layer insulating film coating a drain electrode on a silicon substrate by heat-resisting resin and flattening the surface. CONSTITUTION:The solid image pickup device has the silicon substrate 11 in which a large number of MOS transistors are formed, the layer insulating film 23 coating the drain electrode 18a on the silicon substrate 11, an electrode 21 for connection, which ohmic-contacts with a source electrode 18b on the silicon substrate 11 and extends onto the insulating film, and a photoconductive film 20 shaped onto the electrode 21 for connection through evaporation. The layer insulating film 23 is formed by the heat-resisting resin, the surface is flattened, and the surface is further coated with a silicon oxide film or a silicon nitride film having 0.01-0.5mu thickness. Accordingly, since the layer insulating film is flattened, the foundation of the photoconductive film is smoothed and the dark currents can be inhibited to small valve, and closely adhering property to the foundation of the photoconductive film is improved by the silicon film, and the generation of a crack can be prevented. |
