| 摘要 |
PURPOSE:To make it possible to control so as to improve the physical properties of a photoresist into desired ones according to a fine pattern, which is accompanied by an increase in the integration of a semiconductor substrate, an increase in the density of the substrate and the like, by a method wherein a heating means having a small heat capacity is used and not only the control of constant temperature of a set temperature but also the histories of a heat-up change pattern, a cooling-down change pattern and the like are controlled. CONSTITUTION:A heating means 12a having a small heat capacity is used and the means 12a is controlled to perform a heating treatment on a material W to be treated for a preset time at a set temperature and at the same time, at the time of heat-up up to the set temperature and at the time of heat-up or cooling-down ranging from the set temperature to the following set temperature, the means 12a is controlled to show a preset heat-up history or coolingdown history. For example, ceramic is thermally sprayed on the lower surface of an upper plate 13a made of an Al alloy to form a thin film 13b and a wafer placing stand 12a with a conductive thin film 14 provided on the lower surface of the film 13b is used as a heating means. A current is made to flow through the film 14 from a power circuit comprising an SSR 18 through electrodes 15 and 16, a PWM signal SM is inputted in the SSR 18 from a control system 20 and a temperature control like the above is performed. |
