| 摘要 |
PURPOSE:To obtain a magnetic thin-film pattern of accurate size by forming the thin-film pattern containing one magnetic material layer by ion etching while using a resist pattern as a mask. CONSTITUTION:A thin-film 20 containing at least magnetic layer is formed over the entire surface of a substrate 10. A resist pattern 30, formed on the thin-film 20 in a prescribed shape, is used as a mask to ion-etch the thin film 20 selectively. At this time, a thin-fime pattern 21 in the same shape with the resist pattern 30 is formed under the resist pattern 30. Insulating layers 40 and 41 are deposited approximately to the same thickness with the thin-film 20. The resist pattern 30 is removed and the insulating layer 41 is lifted off on it. Thus, the thin-film pattern 21 in the prescribed shape and the insulating layer 40 having nearly the same thickness with the pattern 21 are formed in a plane without any gap. |
