发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To ensure electric continuity between a first metal wiring and a second metal wiring, by forming an aperture part of surface protection of a bonding window, inside the level difference part of a through hole formed between multilayer metal wirings, and completely covering a metal wiring part wherein the film thickness on the through hole level difference is thin, with a protecting film. CONSTITUTION:A through hole 7 is formed in an interlayer insulating film 4 on a first metal wiring 3 formed on a silicon substrate 1; a second metal wiring 5 is formed on the insulating film 4, the wiring 3 and the second metal wiring 5 are electrically connected via the through hole 7; a step difference part of the wiring 5 formed in the through hole part 7 is covered with a protecting film 6, a bonding window 8 is formed in the protecting film part 6; that is, the protecting film 6 is arranged inside the bonding window 8. A second metal wiring part 9 wherein the film thickness of through hole side wall part is made thin is completely covered with a protecting film. Thereby the damage generated by external cause after assembling process can be prevented, so that electric continuity between the wiring 3 and the wiring 5 can be ensured.
申请公布号 JPH03136331(A) 申请公布日期 1991.06.11
申请号 JP19890276758 申请日期 1989.10.23
申请人 MATSUSHITA ELECTRON CORP 发明人 AOE JUN
分类号 H01L23/52;H01L21/3205;H01L21/60 主分类号 H01L23/52
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