| 摘要 |
PURPOSE:To perform the high degree of cleaning as well as to cut down the processing time for the subject semiconductor by a method wherein a wafer is chemically treated by applying the wiping action of the wiping material, consisting of a chemical-proof soft material, on the surface of the wafer whereon a chemical treatment will be performed. CONSTITUTION:The semiconductor surface 13 exposed in the film formed on the whole surface of a wafer type semiconductor surface or on the surface of the semiconductor is chemically treated by a chemical solution pouring from showering ports 14 and 15. At this time, the chemical treatment is performed by uniformly giving the washing action of the washing materials 11 and 12, consisting of chemical-proof soft material, on the whole surface of the semiconductor surface 13. Accordingly, a high degree of cleaning can be performed, the gate voltage above 20 volt is increased by 41.7% to 83.8%, and the time required for the treatment can be shortened by ten minutes. |
