| 摘要 |
The impurity doping apparatus is comprised of a vacuum chamber, a heater for heating a silicon substrate placed in the chamber, and a gas supply source for supplying a diborane gas containing an impurity component of boron to the chamber. A regulating valve is disposed between the chamber and the gas supply source to regulate the gas flow rate. A CPU is provided to control the heater and the regulating valve according to a given sequence of first, second and third procedures so as to dope the boron into the silicon substrate. The CPU operates according to the first procedure to effect heating of the silicon substrate in the vacuum chamber to activate a surface of the silicon substrate. The CPU operates according to the second procedure to effect charging of the diborane gas into the vacuum chamber while heating the silicon substrate to deposit a boron adsorption film on the activated surface. The CPU operates according to the third procedure to effect annealing of the silicon substrate to diffuse the boron from the adsorption film into the bulk of the silicon substrate.
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