发明名称 WORD LINE DRIVER CIRCUIT FOR EEPROM MEMORY-CELL
摘要 <p>PURPOSE: To apply a read-out voltage, programming voltage, and deletion voltage to a word line by connecting respectively first and second separation transistors between an output of a positive polarity voltage switching means and a word line, between a deletion voltage source and a word line. CONSTITUTION: A source/drain path of a first separation transistor T1 is connected between a power terminal A of a positive polarity voltage switching circuit 10 and a terminal of a word line WL, a gate is connected respectively to a negative polarity signal processing voltage source Vcp during a read-out operation period, a read-out voltage source Vsv during a programming operation period, and an external power source voltage Vdd during a deletion operation period, through a switch SW4. A source/drain path of a second separation transistor T2 is connected between a deletion voltage source Ver/HI and a terminal of the word line WL, the gate itself is connected to the drain, and further connected to the deletion voltage source Ver/HI. Thereby, read-out voltage, programming voltage, and deletion voltage can be switched and supplied.</p>
申请公布号 JPH03132996(A) 申请公布日期 1991.06.06
申请号 JP19900190931 申请日期 1990.07.20
申请人 TEXAS INSTR INC <TI> 发明人 SEBASUTEIANO DARIGO;GIURIANO IMONDEI;SANGUUUEI RIN;MANZAA GIRU
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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