| 摘要 |
<p>PURPOSE:To grow a crystal of high quality by disposing a substrate crystal on a low temperature region to thermally decompose and remove an impurity such as surface oxide or the like, thereby preventing the thermal damage of the crystalline surface of the substrate. CONSTITUTION:The prescribed solution, additive and crystalline substrate are mounted in a growing system, and a growing jig 3 mounted with a substrate crystal 4 and aluminums 5-7 is placed out of a furnace 1. On the other hand, the parts of Ga solutions 8-10 are heated at the prescribed temperature for 2hr. After the growing temperature is cooled to 760 deg.C, the jig 3 is moved, and a jig 15 and the jig 3 are integrated so that the aluminums 5-7 are disposed under a hole becoming a solution tank of the jig 15. Subsequently, a growing jig 14 is moved, GaAs, Al are mixed with Ga solvent, thereby preparing final GaAlAs grown solutions 8'-10'. The jig 3 is moved while ordinarily cooling the furnace at the prescribed temperature decreasing rate, while the substrate crystal 4 is sequentially contacted with the solutions 8'-10', thereby growing the crystal.</p> |
