| 发明名称 |
VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERANORDNUNG. |
| 摘要 |
In a photoelectric conversion device manufacturing method which includes at least a step of forming a non-single-crystal semiconductor layer, a transparent or nontransparent layer, or a laminate member composed of transparent and nontransparent layers by patterning with a laser beam, a laser beam which has a short wavelength of 600 nm or less, a spot diameter of 3 to 60 nm and a width of 50 nano-second is used for the patterning. |
| 申请公布号 |
DE3484526(D1) |
申请公布日期 |
1991.06.06 |
| 申请号 |
DE19843484526 |
申请日期 |
1984.07.04 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD., ATSUGI, KANAGAWA, JP |
发明人 |
YAMAZAKI, SHUNPEI C/O SEMICONDUCTOR ENERGY, SETAGAYA-KU TOKYO, JP |
| 分类号 |
H01L21/301;C23C14/04;H01L21/268;H01L21/304;H01L21/316;H01L27/142;H01L31/0224;H01L31/0392;H01L31/04 |
主分类号 |
H01L21/301 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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