| 摘要 |
PURPOSE:To obtain high luminous efficiency by using an epitaxial substrate wherein adjacent lateral direction growth parts having no dislocation are bonded, as the substrate for a light emitting diode LED. CONSTITUTION:By usual epitaxial growth method, a PN junction is formed from a substrate 1 subjected to lateral direction growth, and an LED is formed. In this case a dislocation 6 may happen to exist in a window part 7 of an insulating film 2 of an epitaxial growth layer 3 obtained by a first lateral direction growth. When an insulating film 2' is formed in the upper part of the dislocation 6 existing in the window parts 7, and lateral direction growth is again performed by arranging new window parts 7' in the part having no dislocation, the propagation of dislocation from the substrate 1 is perfectly shielded for an obtained epitaxial layer 3', so that an epitaxial layer in which dislocation practically does not exist can be obtained. Thereby high luminous efficiency can be obtained. |
