| 摘要 |
PURPOSE:To enhance the performance of a device and relax wiring density by forming a second gate electrode which is isolated from a semiconductor substrate by an insulation film at the lower part of a single-crystal semiconductor thin film and then connecting it with a first gate electrode on the upper part of the thin film within a field insulation region. CONSTITUTION:A thermal oxide film and an Si nitriding film are formed on a single- crystal Si substrate 3 and the thermal oxide film is formed at a region other than a remaining pattern 40 with the remaining pattern 40 as a blocking film thus forming a field insulation film 4. Then, the blocking film is eliminated, the film 4 in the region of a pattern 41 is etched selectively, a thermal oxide film 6 is formed, and an Si thin film 7 is deposited on the entire surface. The substrate 3 is abraded, thus forming a first gate electrode 7 from the thin film 7. Then, a thermal oxide film 2 is formed on another Si substrate 1 and an abrasion surface of the substrate 3 is directly coupled onto it. The surface is abraded, thus enabling the rear surface of the film 4 to be exposed. A gate oxide film 8 is formed onto the layer 3 and an opening 91 is provided in the film 4 within the electrode 7. Then, a gate electrode 9, a gate protection insulation film 10, N-type source and drain diffusion layers 11 and 12, a source electrode 13, and a drain electrode 14 are formed. |
