CMOS-TRANSISTOR AND ONE-CAPACITOR DRAM CELL AND FABRICATION PROCESS THEREFOR,申请号EP19890112325-传众专利搜索

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发明名称	CMOS-TRANSISTOR AND ONE-CAPACITOR DRAM CELL AND FABRICATION PROCESS THEREFOR
摘要
申请公布号	EP0354348(A3)	申请公布日期	1991.06.05
申请号	EP19890112325	申请日期	1989.07.06
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	DHONG, SANG H.;HENKELS, WALTER H.;LU, NICKY C.
分类号	G11C11/405;G11C11/404;G11C11/409;H01L21/8238;H01L21/8242;H01L27/06;H01L27/092;H01L27/108;(IPC1-7):G11C11/24	主分类号	G11C11/405
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