Method or producing PN junction device.

摘要

An inert film is removed from a surface of an N type semiconductor layer to expose an active face. Then, a source gas containing an P type impurity component is applied to the active face to form an impurity adsorption film. Thereafter, a solid-phase diffusion of the impurity is carried out from a diffusion source composed of the N type impurity adsorption film into the N type semiconductor layer to form therein a P type semiconductor layer to thereby provide a PN junction. Lastly, a pair of electrodes are connected to the respective semiconductor layers to form an PN junction device.