| 摘要 |
PURPOSE:To contrive improvement of integration of the subject Schottky barrier diode as well as to simplify the manufacture thereof by a method wherein a guard ring section is formed at a Schottky barrier section using the polycrystalline silicon film, containing the second conductive type impurities provided on the inner circumference of the aperture part of an insulating film, as a source of diffusion. CONSTITUTION:A thermal imsulating film 12 is formed on an N type silicon substrate 11, an aperture part 13 is formed on the film 12 by performing a selective etching, and then a boron-contained polycrystalline silicon film 14, containing the second conductive type impurities, is deposited on the film 12 wherein the aperture part 13 is included. Besides, a CVD-SiO2 film 15 having the property of Schottky etching is performed in such a manner that the film 15 will remain on the concaved circumference of the film 14 whereon the aperture 13 is located, and a residual CVD-SiO2 film 15' is formed. Then, after the residual polycrystalline silicon film 14' has been formed by performing an etching using the film 15' as a mask, the second conductive type impurities are diffused from the film 14', a P+ type guard ring section 17 is formed on the aperture section 13, and the improvement of integration of the subject diode is realized. |
