| 摘要 |
<p>A thin film diode device comprises a diode structure (14), for example an amorphous silicon p-i-n structure, carried on a substrate 12, a pair of conductive layers (16,20) contacting the opposing sides of the structure, and passivating material surrounding the structure which comprises an insulating layer (22) adjacent the structure and a light-absorbing semi-insulating semiconductor layer (24), for example comprising amorphous silicon material, over the insulating layer to reduce photocurrent produced in the diode structure due to incident light. The diode devices are particularly suited for use in an active matrix addressed liquid crystal display device having an array of display elements (30), the devices serving as switches, for example in a diode ring configuration, connected in series between respective display element electrodes and associate address conductors (32).</p> |
