| 摘要 |
PURPOSE: To provide an anisotropic etching method of Si for preventing undercut or projection cut by roving an individual pattern that has already been etched with another masking film, so that a next individual pattern is subjected to etching formation. CONSTITUTION: A large V groove 3 is subjected to etching formation by anisotropic etching, and at that time an 'engagement part' into the large groove 3 of an oxide mask 4 is undercut at a small V groove 2, that generates a pyramid-shaped hole 3 of a rectangular parallelepiped shape. In a multiple-step etching method, another masking film 4 is created photolithographically before a second etching step, so that a wafer 1 is subjected to rack coating accordingly. Then, prior to a first anisotropic etching, a mask for second etching step is already buried, and topology is achieved by burying the negative of the mask for the second etching step that is applied after the first etching. |
