发明名称 |
Non-volatile semiconductor memory device with facility of storing tri-level data |
摘要 |
A non-volatile memory cell includes a MOS transistor of double gate construction. The MOS memory transistor includes a floating gate structure which includes electrically separated first and second segmented floating gates (4a; 4b). For the purpose of writing data, electrons are independently injected into the first and second segmented floating gates. Data are stored in the MOS memory transistor in three different non-volatile storage levels; one with electron accumulated either one of the two segmented floating gates; another with electrons injected into both of the segmented floating gates; and still another with no electrons accumulated on both of the segmented floating gates.
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申请公布号 |
US5021999(A) |
申请公布日期 |
1991.06.04 |
申请号 |
US19880282456 |
申请日期 |
1988.12.09 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KOHDA, KENJI;TOYAMA, TSUYOSHI;ANDO, NOBUAKI;NOGUCHI, KENJI;KOBAYASHI, SHINICHI |
分类号 |
H01L21/8247;G11C11/56;G11C16/04;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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