发明名称 |
Method of fabricating cross-point lightly-doped drain-source trench transistor |
摘要 |
A structure and fabrication process for a self-aligned, lightly-doped drain/source n-channel field-effect transistor wherein a trench is formed in a well region in a wafer including an epitaxial layer on a substrate. A first, heavily doped drain region and bit line element is formed around the trench on the surface of the well, and a second, lightly-doped drain region is formed proximate to the first drain region and self-aligned to the trench sidewalls. A source region is located beneath the trench, which is filled with polysilicon, above which is gate and further polysilicon forming a transfer wordline. The well region at the trench sidewalls are doped to control the device threshold level, and the device is thereby also located at a wordline/bitline cross-point.
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申请公布号 |
US5021355(A) |
申请公布日期 |
1991.06.04 |
申请号 |
US19900513711 |
申请日期 |
1990.05.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DHONG, SANG H.;HWANG, WEI;LU, NICKY C. |
分类号 |
H01L21/223;H01L21/8242;H01L27/108;H01L27/112;H01L29/78 |
主分类号 |
H01L21/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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