| 摘要 |
PURPOSE:To sharply reduce the manufacturing cost by forming an reverse conductivity type amorphous semiconductor layer on one side of a one conductivity type of semiconductor substrate, and then forming a crystal semiconductor layer on the other side of the semiconductor substrate by liquid crystal growth and epitaxially growth, and also crystallizing the amorphous semiconductor layer by solid phase growth. CONSTITUTION:An n<+>-type amorphous silicon layer 2 1mum in thickness is made on one side of a substrate 1, using a p<->-type silicon Si wafer as a semiconductor substrate 1. Succeedingly, a p<+>-type silicon layer 3 of the same conductivity as the substrate 1 is grown in liquid phase on the other side of the substrate 1 opposite to one side of the substrate 1 where the amorphous silicon layer 2 is made. At the same time with this liquid solid growth, the n<+>-type amorphous silicon layer 2 is crystallized by solid phase growth so as to grow a crystalline silicon layer 2' consisting of an n<+>-type crystal or polycrystal semiconductor film, By setting it to the optimum condition for the solid phase growth of the amorphous silicon layer 2, the amorphous silicon layer 2 can be grown into crystal or polycrystal semiconductor film during liquid phase growth process and a PN junction of optional depth is made at the same time. |
