| 摘要 |
<p>PURPOSE:To increase output power, and to improve gain stability by using an emitter ballast resistance chip, a value of which is changed in response to a unit transistor, apart from the unit transistor. CONSTITUTION:Emitter ballast resistance chips 2a, 2b, 2c, resistance values of which are made to differ, are placed on a bridge 7, and connected to transistor chips 1a, 1b, 1c by emitter bonding wires 4a, 4b, 4c respectively. A metallized surface 6 bonded with an input terminal 5 and the transistor chips 1a, 1b, 1c are connected by base bonding wires 3a, 3b, 3c. An output terminal 11 is bonded with a metallized surface 10, and the input terminal 5 functions as a base, the output terminal 11 as a collector and a ground plane as an emitter through a ballast resistor. Accordingly, since the emitter ballast resistance chips are mounted apart from the transistor chips, the emitter ballast resistance chips are not subject to the effect of the transistor chips, and the correct resistance values can be set in response to the states of operation of each unit transistor.</p> |
